Laser-driven spintronic memory device switches 1,000 times faster than DRAM —non-volatile device switches in 40 picoseconds while generating almost no heat
Researchers at the University of Tokyo demonstrated a non-volatile Mn₃Sn magnetic switching device capable of flipping bits in just 40 picoseconds while generating minimal heat, potentially paving the way for lower-power AI hardware and memory systems.
Researchers at the University of Tokyo demonstrated a non-volatile Mn₃Sn magnetic switching device capable of flipping bits in just 40 picoseconds while generating minimal heat, potentially paving the way for lower-power AI hardware and memory systems.
Researchers at the University of Tokyo demonstrated a non-volatile Mn₃Sn magnetic switching device capable of flipping bits in just 40 picoseconds while generating minimal heat, potentially paving the way for lower-power AI hardware and memory systems.
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